Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
نویسندگان
چکیده
Diodes made of heterostructures the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications high frequency electronics optoelectronics highlighted. In particular, advantages metal-insulator-graphene (MIG) diodes over metal-insulator-metal discussed with respect to relevant figures-of-merit. The MIG concept is extended 1D diodes. experimentally implemented radio circuit as active elements presented. Furthermore, graphene-silicon Schottky well terms their potential for photodetection. Here, graphene-based have outperform photodetectors several key figures-of-merit, such overall responsivity or dark current levels. Obviously, some areas may come at cost disadvantages others, so that 2D/3D need be tailored application-specific ways.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2021
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202001210